
Product
name |
Perf. optimiz. |
volt. range |
Supported processes |
DOWNLOAD
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| 65 nm | |||||||
tROMet-HD-PHOENIX |
Ultra Low Leakage Ultra High Density |
1.08 V 1.32 V |
TSMC LP |
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sROMet-LL-PHOENIX |
Ultra Low Leakage High Density Low Power |
1.08 V 1.32 V |
TSMC LP |
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sROMet-LP-CASSIOPEIA-HSL |
Low Power Low Leakage High Density |
1.08 V 1.32 V |
TSMC LP STM LP |
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| 90 nm | |||||||
sROMet-LL-PHOENIX |
Ultra Low Leakage High Density Low Power |
1.08 V 1.32 V |
TSMC LP |
- |
- |
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tROMet-HD-PHOENIX |
Ultra High Density Ultra Low Leakage |
1.08 V 1.32 V |
TSMC LP |
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| 0.13 μm | |||||||
sROMet-LP-CASSIOPEIA-HSL |
Low Power Voltage Scaling High Density |
1.1 V 1.7 V |
TSMC LP |
- |
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tROMet-LP-CASSIOPEIA |
Ultra High Density Low Power |
1.2 V 1.65 V |
TSMC LP TSMC GP |
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sROMet-LL-PHOENIX |
Ultra Low Leakage High Density Low Power |
1.08 V 1.32 V |
TSMC GP |
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sROMet -uLLeVS
PHOENIX |
Low Leakage Voltage Scaling |
0.7 V 1.32 V |
TSMC GP |
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| 0.18 μm | |||||||
dROMet-LP-CASSIOPEIA -SD |
Ultra Low Leakage Low Power High Density |
1.62 V 1.98 V |
TSMC GP |
- |
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SMIC |
- |
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UMC |
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CSM |
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SIL |
- |
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1st Silicon |
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Dongbu-Anam |
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dROMet-LP-CASSIOPEIA -VS |
Ultra Low Leakage Low Power High Density Voltage Scaling |
1.0 V 1.98 V |
TSMC GP |
- |
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SMIC |
- |
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UMC |
- |
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CSM |
- |
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SIL |
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1st Silicon |
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Dongbu-Anam |
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tROMet-LP-CASSIOPEIA |
Ultra High Density Low Power Voltage Scaling |
1.45 V 1.98 V |
TSMC GP |
- |
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dROMet-UHD-CASSIOPEIA-HSL |
Ultra High Density Low Power Voltage Scaling |
1.45 V 1.98 V |
TSMC GP |
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| 0.25 μm | |||||||
dROMet-LP_ CASSIOPEIA |
High Density Low Power Voltage Scaling |
1.5 V 2.75 V |
TSMC |
- |
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UMC |
- |
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CSM |
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| 0.35 μm | |||||||
dROMet-LP-CASSIOPEIA |
High Density Low Power Voltage Scaling |
2.3 V 3.6 V |
TSMC |
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sROMet-ULP-CASSIOPEIA-HSL |
Ultra Low Power High Density Voltage Scaling |
1.2 V 3.6 V |
Specific process |
- |
- |
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diROM-HS-PEGASUS |
High Density High Speed |
3.0 V 3.6 V |
TSMC |
- |
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SEDUCTION* Front-end: Our memories seduce through their key performances and functionalities introduced in a presentation sheet (PS)
CHARM* Front-end: Enables to choose the right architecture depending on the application requirements. Datasheet, preliminary performances and benchmarks available. Online Front-end generator available for a selection of instances.
DESIGN-IN* Front-end: Soc integrators are provided with VHDL/Verilog simulation models, .lib with timing & power consumption in typical case conditions @ nominal voltage + Benchmarks. Online Front-end generator available for all instances in the flexibility of the generator.
INTEGRATION* Front-end: ViC Specification, .lib for 3 to 5 corners according to voltage range, .dB, .lef, LVS sockets + Benchmarks. Online Front-end generator available for all instances in the flexibility of the generator, including abstract file for the safest integration into the SoC.